elektronische bauelemente SSD50N03J 50a, 30v, r ds(on) 11m n-ch enhancement mode power mosfet 13-dec-2016 rev.b page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a c d n o p g e f h k j m b to - 252 (d - pack) cju50n03 = date code rohs compliant product a suffix of -c specifies halogen free description SSD50N03J uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. features high density cell design for ultra low r ds(on) fully characterized avalanche voltage and current good stability and uniformity with high e as excellent package for good heat dissipation applications power switching applications hard switched and high frequency circuits uninterruptible power supply marking package information absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current i d 50 a pulsed drain current i dm 200 a single pulsed avalanche energy 1 e as 70 mj power dissipation p d 1.25 w thermal resistance from junction to ambient r ja 100 c / w lead temperature for soldering purposes@ 1/8 from case for 10s t l 260 c junction and storage temperature range t j , t stg 150, -55~150 c notes: 1. e as condition: v dd =20v, l=0.5mh, r g =25 , starting t j =25c package mpq leader size to-252 2.5k 13 inch 1 gate 3 source 2 drain millimeter millimeter ref. min. max. ref. min. max. a 6. 35 6.90 j 2.186 2.386 b 4.95 5.50 k 0.64 1.14 c 2.10 2.50 m 0.50 1.14 d 0.43 0.9 n 1.3 1.8 e 6.0 7.5 o 0 0.13 f 2.90 ref p 0.58ref. g 5.40 6.40 h 0.60 1.20
elektronische bauelemente SSD50N03J 50a, 30v, r ds(on) 11m n-ch enhancement mode power mosfet 13-dec-2016 rev.b page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition off characteristics drain-source breakdown voltage bv dss 30 - - v v gs =0, i d =250 a drain-source leakage current i dss - - 1 a v ds =30v, v gs =0 gate-source leakage current i gss - - 100 na v ds =0v, v gs = 20v on characteristics 1 gate-threshold voltage v gs(th) 1 1.5 3 v v ds =v gs , i d =250 a - 7 11 v gs =10v, i d =25a static drain-source on-resistance r ds(on) - 9 16 m v gs =5v, i d =20a forward transfer conductance g fs 15 - - s v ds =5v, i d =20a dynamic characteristics input capacitance c iss - 2000 - output capacitance c oss - 280 - reverse transfer capacitance c rss - 160 - pf v ds =15v v gs =0 f=1mhz switching characteristics total gate charge q g - 23 - gate-source charge q gs - 7 - gate-drain (miller) change q gd - 4.5 - nc v ds =10v v gs =10v i d =25a turn-on delay time t d(on) - 10 - rise time t r - 8 - turn-off delay time t d(off) - 30 - fall time t f - 5 - ns v dd =15v v gs =10v r g =1.8 i d =20a source-drain diode characteristics diode forward voltage 1 v sd - - 1.2 v i s =25a, v gs =0 continuous source current i s - - 50 a pulsed source current i sm - - 200 a notes: 1. pulse test : pulse width 300s, duty cycle 2%.
elektronische bauelemente SSD50N03J 50a, 30v, r ds(on) 11m n-ch enhancement mode power mosfet 13-dec-2016 rev.b page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
|
